Nonadiabatic charge pumping in a hybrid single-electron transistor.

نویسندگان

  • Dmitri V Averin
  • Jukka P Pekola
چکیده

We study theoretically current quantization in the charge turnstile based on the superconductor-normal-metal single-electron transistor. The quantization accuracy is limited by either Andreev reflection or by Cooper-pair-electron cotunneling. The rates of these processes are calculated in the "above-the-threshold" regime when they compete directly with the lowest-order tunneling. By shaping the ac gate voltage drive it should be possible to achieve the metrological accuracy of 10;{-8}, while maintaining the quantized current on the level of 30 pA, just by one turnstile with realistic parameters using aluminum as a superconductor.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Conduction coefficient modeling in bilayer graphene based on schottky transistors

Nowadays carbon nanoparticles are applied on the island of single electron transistor and Nano-transistors. The basis of single electron devices (SEDs) is controllable single electron transfer between small conducting islands. Based on the important points in quantum mechanics, when a wave passes through several spatial regions with different boundaries, the wave function of the first region di...

متن کامل

Nonadiabatic pumping through interacting quantum dots.

We study nonadiabatic two-parameter charge and spin pumping through a single-level quantum dot with Coulomb interaction. For the limit of weak tunnel coupling and in the regime of pumping frequencies up to the tunneling rates, Omega less, similar Gamma/variant Planck's over 2pi, we perform an exact resummation of contributions of all orders in the pumping frequency. As striking nonadiabatic sig...

متن کامل

Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain

Related Articles Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors Appl. Phys. Lett. 101, 243501 (2012) Reduced graphene oxide based flexible organic charge trap memory devices Appl. Phys. Lett. 101, 233308 (2012) Analyzing threshold pressure limitations in microfluidic transistors for self-regulated microfluidic circuits Appl. Phys. Lett. 101, 2341...

متن کامل

High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure

Related Articles Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors Appl. Phys. Lett. 101, 243501 (2012) Reduced graphene oxide based flexible organic charge trap memory devices Appl. Phys. Lett. 101, 233308 (2012) Analyzing threshold pressure limitations in microfluidic transistors for self-regulated microfluidic circuits Appl. Phys. Lett. 101, 2341...

متن کامل

Quantum current modeling in nano-transistors with a quantum dot

Carbon quantum dots (CQDs) serve as a new class of ‘zero dimensional’ nanomaterial’s in thecarbon class with sizes below 10 nm. As light emitting nanocrystals, QDs are assembled from semiconductormaterials, from the elements in the periodic groups of II-VI, III-V or IV-VI, mainly thanks to impacts of quantum confinement QDs have unique optical properties such as brighter, highly pho...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:
  • Physical review letters

دوره 101 6  شماره 

صفحات  -

تاریخ انتشار 2008